Wooyong Keum, Heekang Son, Doyoon Kim, Junghwan Yoo, and Jae-Sung Rieh, “A 300-GHz Fundamental-Mode Differential Colpitts Voltage-Controlled Oscillator Based on InP HBT Technology,” 2022 Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Nov. 29 – Dec. 2, 2022.
Jong-Guk Choi, Jaehyeon Park, Min-Gu Kang, Doyoon Kim, Jae-Sung Rieh, Kyung-Jin Lee, Kab-Jin Kim, Byong-Guk Park, “Voltage-driven Gigahertz Frequency Modulation in Spin Hall Nano-oscillators,” The 67th Annual Conference on Magnetism and Magnetic Materials, Minneapolis, USA, October 31 – November 04, 2022.
Heekang Son, Junghwan Yoo, and Jae-Sung Rieh, “A 350-GHz Fundamental-Mode Common-Base Cross-Coupled Oscillator in 130-nm InP HBT Technology,” 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2022), Busan, Korea, Aug. 29 – 31, 2022.
Kiryong Song, Doyoon Kim, Jungsoo Kim, Jai Heon Cho, and Jae-Sung Rieh, “Terahertz 3D Imaging with a 300-GHz CMOS Multi-Chip Array Detector,” 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2022), Busan, Korea, Aug. 29 – 31, 2022.
Gihyun Lim, Junghwan Yoo, Heekang Son, Doyoon Kim, and Jae-Sung Rieh, “A WR3.4 x12 Frequency Multiplier Chain Based on InP HBT Technology,” 2021 Asia-Pacific Microwave Conference (APMC), Brisbane, Australia, 2021, pp. 299-301. [Link]
Surajit Kumar Nath, Junghwan Yoo, Jae-Sung Rieh, and Daekeun Yoon, “A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS,” IEEE 47th European Solid State Circuits Conference (ESSCIRC), Virtual, September 13 – 17, 2021. [Link]
Heekang Son, Doyoon Kim, Yan Zhao, Richard Al Hadi, Mehmet Kaynak, and Jae-Sung Rieh, “A 24-48 GHz Wideband Frequency Tripler in SiGe BiCMOS Technology,” 2020 Asia-Pacific Microwave Conference (APMC), Hong Kong, 2020, pp.101-103.
Junghwan Yoo, Heekang Son, Jungsoo Kim, Doyoon Kim, and Jae-Sung Rieh, “A 90-GHz High DC-to-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS,” 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2020), Hiroshima, Japan, Sep. 02, 2020.
Jungsoo Kim, Heekang Son, Doyoon Kim, Diryong Song, Junghwan Yoo, and Jae-Sung Rieh, “InP HBT Oscillators Operating up to 682 GHz with Coupled-Line Load for Improved Efficiency and Output Power,” 2020 IEEE International Microwave Symposium (IMS 2020), Los Angeles, USA, Aug. 04, 2020.
Sanggeun Jeon, Jae-Sung Rieh and Moonil Kim, “WR-3 Band Integrated Circuits in InP HBT Technology,” 2019 IEEE International Symposium on Circuits and Systems (ISCAS), Sapporo, Japan, May. 26, 2019.
Heekang Son, Doyoon Kim, Kiryong Song, Jai-Heon Cho, and Jae-Sung Rieh, “A 300-GHz Integrated Transmitter based on InP HBT Technology,” 2018 Asia-Pacific Microwave Symposium (APMC), Kyoto, Japan, Nov. 8, 2018.
Jae-Sung Rieh, Jongwon Yun, Daekeun Yoonm Jungsoo Kim, Heekang Son, “Terahertz InP HBT Oscillators,” 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2018), Melbourne, Australia, Aug. 15, 2018.
Doyoon Kim and Jae-Sung Rieh, “A D-band Low Noise Amplifier in 65nm CMOS Technology,” 2017 Korea-Japan Microwave Workshop (KJMW), pp. 54-55, Tokyo, Japan, Dec. 11 – 12, 2017.
Kiryong Song, Jongwon Yun, and Jae-Sung Rieh, “A 300-GHz Quadrature VCO based on InP HBT Technology,” 2017 Korea-Japan Microwave Workshop (KJMW), pp. 52-53, Tokyo, Japan, Dec. 11 – 12, 2017.
Jae-Sung Rieh, Jongwon Yun, Daekeun Yoon, Kiryong Song, and Jungsoo Kim, “Development of THz integrated circuits and their imaging applications (invited),” The 4th Microwave/THz Science and Applications, p. 1, Okayama, Japan, Nov. 19 – 23, 2017.
Kiryong Song, Jungsoo Kim, Doyoon Kim, Myeong-Gyo Seo, and Jae-Sung Rieh, “A CMOS 300-GHz 7 by 7 Detector Array for THz Imaging,” 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2017), pp. 31-33, Seoul, Korea, August 30 – September 01, 2017. [Link]
Jae-Sung Rieh, Daekeun Yoon, Jongwon Yun, Jungsoo Kim, Kiryong Song, Mehmet Kaynak, and Bernd Tillack, “Approaches to Enhance the Performance of SiGe Imagers Operating near 130 GHz and 300 GHz (invited),” 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2016), pp. 1-3, Taipei, Taiwan, August 24 – 26, 2016. [Link]
Daekeun Yoon, Jungsoo Kim, and Jae-Sung Rieh, “A 290-GHz CMOS Heterodyne Integrated Imager,” 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2016), pp. 1-3, Taipei, Taiwan, August 24 – 26, 2016. [Link]
Jae-Sung Rieh, “Transistor-based Electronic THz Sources and Detectors (invited),” URSI AP-RASC, pp. 324-325, Seoul, Korea, August 2016.
Jae-Sung Rieh, Jongwon Yun, Daekeun Yoon, Jungsoo Kim, Kiryong Song, Mehmet Kaynak, and Bernd Tillack, “Terahertz Integrated Circuits for Imaging Applications (invited),” 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 415-417, Hakodate, Japan, July 4 – 6, 2016.
Jae-Sung Rieh, Daekeun Yoon, Jungsoo Kim, and Jongwon Yun, “THz Tomography Imaging with Solid-State Electrical Source and Detector (invited),” EMN Meeting on Terahertz, pp. 74-75, San Sebastian, Spain, May 14 – 18, 2016.
Jae-Sung Rieh, Jongwon Yun, Daekeun Yoon, Jungsoo Kim, and Kiryong Song, “Transistor-based THz Signal Sources and Their Imaging Applications (invited), The 10th Asia Pacific Laser Symposium, p. 238, Jeju, Korea, May 10 – 14, 2016.
Jae-Sung Rieh and Jongwon Yun, “Development of InP HBT THz Sources and Their Application to Reflection-mode Imaging on Bio Samples (invited),” 7th International THz-Bio Workshop, p. 27, Seoul, Korea, April 7, 2016.
Junghwan Yoo, Namhyung Kim, Myeong-Gyo Seo, and Jae-Sung Rieh, “A Dual Mode 222/111-GHz Signal Source Based on 65-nm CMOS Technology,” 15th International Conference on Electronics, Information, and Communication (ICEIC), pp. 673-674, Danang, Vietnam, January 2016.
Namhyung Kim, Heekang Son, Dong-Hyun Kim, and Jae-Sung Rieh, “A 130-GHz OOK Transmitter in 65-nm CMOS Technology,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2016), pp. 113-115, Austin, USA, January 2016. [Link]
Daekeun Yoon, Jongwon Yun, Jungsoo Kim, Kiryong Song, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “3-D THz Tomography with an InP HBT Signal Source and a SiGe HBT Imaging Receiver Operating near 300GHz,” 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), pp. 1-2, Hong Kong, August 2015. [Link]
Junghwan Yoo, Namhyung Kim, Jongwon Yun, Meongkyo Seo, and Jae-Sung Rieh, “A CMOS Triple-Push 280-GHz VCO Integrated with 1/16,384 Divider Chain,” 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), pp. 58-60, Sendai, Japan, August 27, 2015. [Link]
Jae-Sung Rieh, Daekeun Yoon, and Jongwon Yun, “Terahertz and millimeter-wave circuits based on SiGe HBTs (Invited),” 11th Topical Workshop on Heterostructure Microelectronics (TWHM), pp. 59-60, Takayama, Japan, August 24, 2015.
Jungsoo Kim, Daekeun Yoon, Jongwon Yun, Kiryong Song, and Jae-Sung Rieh, “Development of a 300-GHz InP HBT Oscillator and a SiGe HBT Heterodyne Detector and Their Application to THz 2D imaging,” 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 93-94, Jeju, Korea, June 29, 2015.
Jae-Sung Rieh, “Full solid-state 300 GHz imaging (invited),” 6th International THz-Bio Workshop, Seoul, Korea, April 9, 2015.
Daekeun Yoon, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “260-GHz Differential Variable Gain Amplifier based on SiGe HBT Technology,” 2014 Korea-Japan Microwave Workshop (KJMW), pp. 49-50, Suwon, Korea, Dec. 2014.
Daekeun Yoon, Kiryong Song, Jungsoo Kim, and Jae-Sung Rieh, “Si-based Sub-THz Heterodyne Imaging Circuits (Invited),” 2014 Asia-Pacific Microwave Symposium (APMC), pp. 1136 – 1138, Sendai, Japan, Nov. 7, 2014. [Link]
Jae-Sung Rieh, Daekeun Yoon, and Jongwon Yun, “An Overview of Solid-State Electronic Sources and Detectors for Terahertz Imaging (invited),” IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 85-88, Guilin, China, Oct. 29, 2014. [Link]
Daekeun Yoon, Kiryong Song, Mehmet Kaynak, Bernd Tillack and Jae-Sung Rieh, “SiGe HBT Circuits for 140-GHz Heterodyne Receiver Front-End,” 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 157-159, Kanazawa, Japan, July 2014.
Jongwon Yun, Daekeun Yoon, and Jae-Sung Rieh, “Terahertz Imaging Based on a 300 GHz InP HBT Oscillator as a Source,” 2014 Global symposium on millimeter-waves (GSMM), pp. 36 – 37, Seoul, Korea, May, 2014.
Jae-Sung Rieh, “Solid-state electronic components for THz imaging (invited),” 5th International THz-Bio Workshop, O-9, Seoul, Korea, April 3, 2014.
Daekeun Yoon, Namhyung Kim, Ullich Pfeiffer, Bernd Heinemann, and Jae-Sung Rieh, “A wide band 215-255 GHz CB differential amplifier in a 0.25-μm SiGe HBT Technology,” 2013 Asia-Pacific Microwave Symposium (APMC), pp. 351 – 353, Seoul, Korea, Nov. 2013. [Link]
Namhyung Kim, Kyungmin Kim, and Jae-Sung Rieh, “A 177 GHz Triple-Push VCO in 0.13-μm RFCMOS Technology,” 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 281 – 283, Seoul, Korea, June 2013.
Daekeun Yoon and Jae-Sung Rieh, “Si-based Imaging Receivers for mm-wave and THz Applications (invited),” European Conference on Antennas and Propagation (EuCAP), pp. 1747 – 1748, Gothenburg, Sweden, April 2013. [Link]
Dong-Hyun Kim, Jongwon Yun, and Jae-Sung Rieh, “Si-based D-band Frequency Conversion Circuits (invited),” International SoC Design Conference (ISOCC), pp. 251 – 253, Jeju, Korea, Nov. 2012. [Link]
Jae-Sung Rieh, Yongho Oh, Daekeun Yoon, Namhyung Kim, Dong-Hyun Kim, Jongwon Yun, Hyunchul Kim, and Kiryong Song, “An Overview of Challenges and Current Status of Si-based Terahertz Monolithic Integrated Circuits (invited),” IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1-4, Xian, China, Oct. 2012. [Link]
B. Hwang, I. Song, J. Park, J. Shin, J. Rieh, S. Hwang, B. Ju, “Fabrication of suspended bridge type resonator using laser interference lithography,” European Microwave Integrated Circuits Conference, pp. 524-527, Amsterdam, Netherlands, Oct. 2012. [Link]
Hyunchul Kim, Daekeun Yoon, and Jae-Sung Rieh, “A 140-GHz Fully Differential Common-Source Amplifier in 65 nm CMOS,” 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 142-145, Okinawa, Japan, June 2012.
Jea-Shik Shin, Insang Song, Moonchul Lee, Hosoo Park, Sang Uk Son, Chul-Soo Kim, Duck-Hwan Kim, Jing Cui, Sung-Woo Hwang, Jae-Sung Rieh, “Bulk Acoustic Wave Resonators of Low Lateral Energy Leakage using Air Edge Reflector,” IEEE International Microwave Symposium, pp. 1-3, Montreal, Canada, June. 2012. [Link]
Moonil Kim, Jae-Sung Rieh, and Sanggeun Jeon, “Recent Progress in Terahertz Monolithic Integrated Circuits (invited),” IEEE International Symposium on Circuits and Systems (ISCAS), Seoul, Korea, pp. 746-749, May. 2012. [Link]
Yongho Oh and Jae-Sung Rieh, “RF Performance of SiGe HBTs with Sub-Ground Rule Emitter Width,” Proceeding of International Conference on Electronics, Information and Communication 2012, pp. 186-187, Feb., 2012.
Jongwon Yun, Hyunchul Kim, Hyogi Seo, and Jae-Sung Rieh, “A 140 GHz Single-Ended Injection Locked Frequency Divider with Inductive Feedback in SiGe HBT Technology,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 61-64, Santa Clara, CA, USA, Jan.17, 2012 [Link]
Dong-Hyun Kim and Jae-Sung Rieh, “A SiGe140-GHz Low Power Gm-Boosted Down-Conversion Mixer,” 2011 Asia-Pacific Microwave Symposium (APMC), pp. 1126-1129, Melbourne, Australia, Dec. 06, 2011. [Link]
Jae-Sung Rieh, “Solid-State Terahertz Electronics for Communication Systems (Invited),” Joint Conference of International Symposium on Terahertz Nanoscience (TeraNano 2011) Workshop of International Terahertz Research Network (GDR-I), pp. 145-146, Osaka, Japan, Nov. 2011.
Yongho Oh and Jae-Sung Rieh, “The Effect of Gate Metal Wiring Scheme and Number of Fingers on fT and fmax of Multi-finger RF MOSFETs,” 2011 Korea-Japan Microwave Conference, pp.150-153, Fukuoka, Japan, Nov. 2011.
Jae-Sung Rieh, Sanggeun Jeon, and Moonil Kim, “An Overview of Integrated THz Electronics for Communication Applications (Invited),” International Midwest Symposium on Circuit and Systems(MWSCAS), pp. 1-4, Seoul, Korea, August 2011. [Link]
Yongho Oh and Jae-Sung Rieh, “The Effect of Gate Poly Pitch and Metal Interconnection Topology on the RF Performance of MOSFETs,” 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 26-29, Daejeon, Korea, June 2011.
Sung-Jin Kim, Dong-Hyun Kim, and Jae-Sung Rieh, “A V-band Common-Source Low Noise Amplifier in a 0.13 µm RFCMOS Technology,” 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 289-292, Tokyo, Japan, June 2010.
H. J. Park, J. S. Rieh, M. Kim, and J. B. Hacker, “300 GHz Six-Stage Differential-Mode Amplifier,” in IEEE International Microwave Symposium, pp. 49-52, Ahaneim, USA, May 2010. [Link]
Jae-Sung Rieh and Dong-Hyun Kim, “An Overview of Semiconductor Technologies and Circuits for Terahertz Communication Applications,” International Workshop on Multi-Gigabit mm-wave and Tera-Hz Wireless Systems, Conference on Infrared, Millimeter, and Terahertz Waves (MTWS), Hawaii, USA, Nov. 2009. [Link]
Dong-Hyun Kim and Jae-Sung Rieh, “A Single-Balanced 60-GHz Down-Conversion Mixer in 0.13 ㎛ CMOS Technology for WPAN Applications,” International Conference on Infrared, Millimeter, and Terahertz Waves, R3B04.0302 Busan, Korea, Sept. 2009. [Link]
Seungwoo Seo and Jae-Sung Rieh, “A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology,” 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 1A.7, Busan, Korea, June 2009.
Jae-Sung Rieh and Sooyeon Kim, “Technology and Design Considerations for Millimeter-Wave Circuits (invited),” The 9th International Conference on Solid-State and Integrated-Circuit Technology, pp. 1352-1356, Beijing, China, Oct. 2008. [Link]
Sooyeon Kim, Yongho Oh, and Jae-Sung Rieh, “Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications,” 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 221-226, Sapporo, Japan, July 2008.
Namhyung Kim, Seungyong Lee, and Jae-Sung Rieh, “A 57-GHz LC VCO in a 130-nm RFCMOS Technology,” KU-HIT International Workshop, Harbin, China, June 23-24, 2008.
Seungyong Lee, Kihan Kim, Tae Hyun Oh, Ickhyun Song, Hyungcheol Shin, Moonil Kim, and Jae-Sung Rieh, “Suppression of Digital Noise Coupling on LNA in 0.13-um RFCMOS Technology by Global Guard Rings”, Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 206-209, Orlando, Florida, Jan. 2008. [Link]
K. Lee, D. Lee, J. Rieh, M. Kim, “A V-Band Waveguide Transition Design Appropriate for Monolithic Integration,” 2007 Asia-Pacific Microwave Conference, pp. 847-850, Dec. 11-14, 2007. [Link]
D. H. Lee, J. I. Lee, J. –S. Rieh, and M. Kim, “A simple oscillator design with the frequency controlled by patch size,” 2006 Asia-Pacific Microwave Conference, pp. 465-467, Yokohama, Japan, Dec. 12-15, 2006. [Link]
Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J.D. Cressler, G. Niu, J.-S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures,” International Semiconductor Device Research Symposium, pp. 159-160, Washington D.C., 7 – 9 Dec. 2005. [Link]
Jae-Sung Rieh, “Modern Trend of high-speed SiGe Heterojunction Bipolar Transistors,” SEMICON Korea 2005, pp. 245-248, Seoul, Korea, Jan. 2005. [Link]
M. Khater, J. -S. Rieh, T. Adam, A. Chinthakindi, J. Johnson, R. Krishnasamy, M. Meghelli, F. Pagette, D. Sanderson, C. Schnabel, K. T. Schonenberg, P. Smith, K. Stein, A. Stricker, D. Ahlgren, and G. Freeman, “SiGe HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps,” International Electron Devices Meeting, pp. 247-250, Washington D.C., Dec. 2004. [Link]
G. Freeman, D. Greenberg, J. –S. Rieh, and A. Stricker, “Challenges to achieve THz SiGe HBTs (invited),” Solid-State Device Meeting, pp. 310-311, Tokyo, Japan, Sept. 2004. [Link]
A. Joseph, L. Lanzerotti, X. Liu, D. Sheridan, J. Johnson, Q. Liu, J. Dunn, J. –S. Rieh, and D. Harame, “Advances in SiGe HBT BiCMOS Technology,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 1-4, Atlanta, Georgia, Sept. 2004. [Link]
B. Jagannathan, D. Greenberg, D. I. Sanderson, J. -S. Rieh, J. Pekarik, J. O. Plouchart, and G. Freeman, “Speed and Power Performance Comparison of State-of-the-Art CMOS and SiGe RF transistors,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 115-118, Atlanta, Georgia, Sept. 2004. [Link]
A. K. Sutton, J. Cressler, B. M. Haugerud, Y. Lu, W. –M. Kuo, P. W. Marshall, R. A. Reed, J. –S. Rieh, G. Freeman, and D. Ahlgren, “Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs DPF,” The Nuclear and Space Radiation Effects Conference, Atlanta, Georgia, July 2004. [Link]
J. -S. Rieh, M. Khater, K. T. Schonenberg, F. Pagette, P. Smith, T. Adam, K. Stein, D. Ahlgren, and G. Freeman, “Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs,” Device Research Conference, pp. 235-236, Notre Dame, Indiana, June 2004. [Link]
J. -S. Rieh, D. Greenberg, M. Khater, K. T. Schonenberg, S. -J. Jeng, F. Pagette, T. Adam, A. Chinthakindi, J. Florkey, B. Jagannathan, J. Johnson, R. Krishnasamy, D. Sanderson, C. Schnabel, P. Smith, A. Stricker, S. Sweeney, K. Vaed, T. Yanagisawa, D. Ahlgren, K. Stein, and G. Freeman, “SiGe HBTs for millimeter-wave applications with simultaneously optimized fT and fmax of 300 GHz,” RFIC Symposium, pp. 395-398, Fort Worth, Texas, June 2004. [Link]
Andreas D. Stricker, Gregory Freeman, Marwan Khater, and Jae-Sung Rieh, “Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT,” International SiGe Technology and Device Meeting, Frankfurt (Oder), Germany, May 2004. [Link]
C. Zhu, Q. Liang, R. Al-Huq, J.D. Cressler, A. Joseph, J. Johansen, T. Chen, G. Niu, G. Freeman, J. -S. Rieh, and D. Ahlgren, “An investigation of the damage mechanisms in impact ionization-induced “Mixed-mode” reliability stressing of scaled SiGe HBTs,” International Electron Devices Meeting, pp. 185-188, Washington D.C., Dec. 2003. [Link]
J.A. Johansen, Z. Jin, J.D. Cressler, Y. Cui, G. Niu, Q. Liang, J. -S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “On the Scaling Limits of Low-Frequency Noise in SiGe HBTs,” International Semiconductor Device Research Symposium, pp. 12-13, Washington D.C., Dec. 2003. [Link]
B. A. Orner, Q.Z. Liu, B. Rainey, A. Stricker, P. Geiss, P. Gray, M. Zierak, M. Gordon , D. Collins, V. Ramachandran, W. Hodge, C. Willets, A. Joseph, J. Dunn, J.-S. Rieh, S.-J. Jeng, E. Eld, G. Freeman, and D. Ahlgren, “A 0.13 um BiCMOS technology featuring a 200/280 GHz (fT / fmax) SiGe HBT,” 2003 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 203-206, Toulouse, France, Sept. 2003. [Link]
Greg Freeman, Zhijian Yang, Fernando Guarin, Jae-Sung Rieh, David Ahlgren, and Ed Hostetter, “Reliability characteristics of 200 GHz fT / 285 GHz fMAX SiGe HBTs,” IEEE GaAs IC Symposium, pp. 187-190, San Diego, California, Oct. 2003. [Link]
D.L. Harame, G.Freeman, J. Rieh, B.Jagannathan, D.Greenberg, A.Joseph, J. Johnson, F. Guarin, Z. Yang, D. Ahlgren, P.Cottrell, J. Dunn, B.Orner, and S.Subbanna, “A look into the future for SiGe HBTs (invited),” International Symposium on Compound Semiconductors, pp. 207-208, San Diego, California, Aug. 2003. [Link]
J. -S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, S. -J. Jeng, M. Khater, D. Ahlgren, G. Freeman, and S. Subbanna, “Performance and design considerations for high speed SiGe HBTs of fT /fmax=375GHz/210GHz,” 15th International Conference on Indium Phosphide and Related Materials, pp. 374-377, Santa Barbara, California, May, 2003. [Link]
Greg Freeman, Jae-Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, Alvin Joseph, and David Ahlgren, “SiGe HBT performance and reliability trends through fT of 350GHz (invited),” 2003 International Reliability Physics Symposium, pp. 332-338, Dallas, Texas, April 2003. [Link]
Greg Freeman, Jae-Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, and Alvin Joseph, “Device scaling and application trends for over 200GHz SiGe HBTs (invited),” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 6-9, April 2003. [Link]
D.L. Harame, G. Freeman, D. Ahlgren, J.S. Dunn, D. Greenberg, A. Joseph, J. -S. Rieh, B. Jagannathan, S.A. St. Onge, D. Coolbaugh, V. Ramachandran, J. Johnson, L.Lanzerotti, N.Feilchenfeld, P. Cottrel, R. Singh, C. Dickey, M. Meghelli, S.Subbanna, O. Schreiber, and T. Tanji, “IBM’s SiGe BiCMOS Technology Roadmap (invited),” International SiGe(C) Epitaxy and Heterostructures Conference, Santa Fe, New Mexico, March 2003.
Basanth Jagannathan, Jae-Sung Rieh, and Greg Freeman, “Scaling towards 300GHz fT / fmax SiGe transistors (invited),” 2003 Topical Workshop on Heterostructure Microelectronics, pp. 112-113, Okinawa, Japan, Jan. 2003. [Link]
A. Joseph, G. Freeman, J. S. Rieh, B. Jagannathan, A. Stricker, J. Dunn, J. Johnson, and D. Harame, “Pushing the frequency envelope using ultra-fast SiGe HBTs with fT / fmax above 200 GHz (invited),” Ultrafast Electronics and Optoelectronics Topical Meeting, pp. 121-123, Washington D.C., Jan. 2003.
Greg Freeman, Basanth Jagannathan, and Jae-Sung Rieh, “Avalanche considerations in SiGe HBT scaling,” International SiGe Technology and Device Meeting, pp. 51-52, Nagoya, Japan, Jan. 2003. [Link]
Andreas Stricker, Jeffrey Johnson, Greg Freeman, and Jae-Sung Rieh, “Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD,” 2003 International SiGe Technology and Device Meeting, pp. 59-60, Nagoya, Japan, Jan. 2003. [Link]
J. -S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. -J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, “SiGe HBTs with cut-off frequency of 350GHz,” International Electron Devices Meeting, pp. 771-774, San Francisco, California, Dec. 2002. [Link]
J. Dunn, G. Freeman, D. Harame, A. Joseph, D. Coolbaugh, R. Groves, K. Stein, R. Volant, S. Subbanna, V. S. Marangos, S. St. Onge, E. Eshun, P. Cooper, J. Johnson, J. Rieh, V. Ramachandran, D. Ahlgren, D. Wang, and X. Wang, “Product applications and technology directions with SiGe BiCMOS,” 2002 IEEE GaAs IC Symposium, pp. 135-138, Monterey, California, Oct. 2002. [Link]
J. -S. Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman, and S. Subbanna, “Structural dependence of the thermal resistance of trench-isolated bipolar transistors,” 2002 Bipolar/BiCMOS Circuits and Technology Meeting, pp.100-103, Monterey, California, Oct. 2002. [Link]
D. C. Ahlgren, B. Jagannathan, S.-J. Jeng, P. Smith, D. Angell, H. Chen, M. Khater, F. Pagette, J.-S. Rieh, K. Schonenberg, A. Stricker, G. Freeman, A. Joseph, K. Stein, S. Subbanna, “Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance,” 2002 Bipolar/BiCMOS Circuits and Technology Meeting, pp.80-83, Monterey, California, Oct. 2002. [Link]
J. -S. Rieh, K. Watson, F. Guarin, Z. Yang, P. -C. Wang, A. Joseph, G. Freeman, and S. Subbanna, “Wafer level forward current reliability analysis of 120GHz production SiGe HBTs under accelerated current stress,” 2002 International Reliability Physics Symposium, pp. 184-188, Dallas, Texas, April 2002. [Link]
Kevin Brelsford, Jae-Sung Rieh, Ping-Chuan Wang, and Greg Freeman, “Electromigration current limit of high speed SiGe bipolar circuits influenced by device self-heating,” 2001 International Integrated Reliability Workshop, pp. 78-82, S. Lake Tahoe, California, Oct. 2001. [Link]
G. Freeman, Y. Kwark, M. Meghelli, S. Zier, A. Rylyakov, M. Sorna, T. Tanji, O. Schreiver, K. Walter, J. Rieh, B. Jagannathan, A. Joseph, and S. Subbanna, “40 Gbit/sec circuits built from a 120GHz fT SiGe technology (invited),” 2001 IEEE GaAs IC Symposium, pp. 89-92, Baltimore, Maryland, Oct. 2001. [Link]
J. -S. Rieh, D. Greenberg, B. Jagannathan, G. Freeman, and S. Subbanna, “Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 110-113, Ann Arbor, Michigan, Sept. 2001. [Link]
Z. Ma, J. -S. Rieh, P. Bhattacharya, S. A. Alterovitz, G. E. Ponchak, and E. T. Croke, “Long-term reliability of Si/Si0.7Ge0.3/Si HBTs from accelerated lifetime testing,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 122-130, Ann Arbor, Michigan, Sept. 2001. [Link]
P. Bhattacharya, O. Qasaimeh, and J. -S. Rieh, “SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications (invited),” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 135-137, Ann Arbor, Michigan, Sept. 2001. [Link]
S. Subbanna, G. Freeman, J. Rieh, B. Jagannathan, G. Hueckel, K. Brelsford, A. Joseph, D. Ahlgren, D. Herman, and B. Meyerson, “Circuit design considerations for using 100-200GHz SiGe HBT BiCMOS technology in high-speed network ICs (Late News),” 13th International Conference on Indium Phosphide & Related Materials, Nara, Japan, May 2001. [Link]
Jae-Sung Rieh, “Properties of SiGe alloys and their applications to high-speed devices and circuits,” 12th KSEA Northeast Regional Conference, pp. 11-15, Fort Lee, New Jersey, April 2001. [Link]
J. -S. Rieh, P. K. Bhattacharya, and E. T. Croke, “Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors,” 57th Device Research Conference, pp. 184-185, Santa Barbara, California, June 1999. [Link]
J. -S. Rieh, L. -H. Lu, Z. Ma, X. Liu, L. P. B. Katehi, P. K. Bhattacharya, and E. T. Croke, “Small- and large-signal operation of X-band CE and CB SiGe/Si power HBTs,” 1999 IEEE MTT-s International Microwave Symposium, pp. 1191-1194, Anaheim, California, June 1999. [Link]
J. -S. Rieh, L. -H. Lu, L. P. B. Katehi, P. K. Bhattacharya, and E. T. Croke, “Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 10-15, Ann Arbor, Michigan, Sept. 1998. [Link]
G. David, K. Yang, M. Crites, J. -S. Rieh, L. -H. Lu, P. K. Bhattacharya, L. P. B. Katehi, and J. F. Whitaker, “Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC,” Topical meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 187-191, Ann Arbor, Michigan, Sept. 1998. [Link]
L. -H. Lu, J. -S. Rieh, L. P. B. Katehi, P. K. Bhattacharya, and E. T. Croke, “K-band Si/ SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure,” 1998 IEEE RFIC symposium Digest, pp. 17-20, Baltimore, Maryland, June 1998. [Link]
J. -S. Rieh, O. Qasaimeh, D. Klotzkin, L. -H. Lu, K. Yang, L. P. B. Katehi, P. Bhattacharya, and E. T. Croke, “Monolithically integrated SiGe-based PIN-HBT front-end transimpedance photoreceivers,” 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, pp. 322-331, Ithaca, New York, Aug. 1997. [Link]
