H. Son, J. Yoo, D. Kim and J. -S. Rieh, “A 700-GHz Integrated Signal Source Based on 130-nm InP HBT Technology,” in IEEE Transactions on Terahertz Science and Technology, (early access). [Link]
D. Kim et al., “A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS,” in IEEE Microwave and Wireless Technology Letters, vol. 33, no. 9, pp. 1313-1316, Sept. 2023. [Link]
J. Yoo et al., “A 272–341-GHz Integrated Amplifier-Frequency-Doubler Chain in 65-nm CMOS,” in IEEE Microwave and Wireless Technology Letters, vol. 33, no. 8, pp. 1215-1218, Aug. 2023. [Link]
Jong-Guk Choi, Jaehyeon Park, Min-Gu Kang, Doyoon Kim, Jae-Sung Rieh, Kyung-Jin Lee, Kab-Jin Kim, Byong-Guk Park, “Voltage-driven gigahertz frequency tuning of spin Hall nano-oscillators,” Nature Communications, vol. 13, pp. 1-8, June 30 2022, Art no. 3783
Heekang Son, Jungsoo Kim, Kiryong Song, Doyoon Kim, Junghwan Yoo and Jae-Sung Rieh, “600-GHz High-Power Signal Sources Based on 250-nm InP HBT Technology,” in IEEE Transactions on Terahertz Science and Technology, vol. 12, no. 6, pp. 648-657, 2022. [Link]
Kiryong Song, Doyoon Kim, Jungsoo Kim, Junghwan Yoo, Wooyong Keum and Jae-Sung Rieh, “A Scalable 300-GHz Multichip Stitched CMOS Detector Array,” IEEE Transactions on Microwave Theory and Techniques, vol. 70, no. 3, 2022. [Link]
Sooyeon Kim, Daekeun Yoon, Jungsoo Kim, Junghwan Yoo, Kiryong Song and Jae-Sung Rieh, “A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range,” in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 2, pp. 309-313, Feb. 2022. [Link]
Doyoon Kim, Kiryong Song, Richard Al Hadi, Heekang Son, Jungsoo Kim, Yan Zhao, and Jae-Sung Rieh, “A Wideband CMOS On-Chip Terahertz Frequency Detector with Slow-Wave Structure,” IEEE Microwave and Wireless Component Letters, vol. 31, no. 6, 2021. [Link]
Jungsoo Kim , Daekeun Yoon , Heekang Son , Doyoon Kim , Junghwan Yoo, Jongwon Yun and Jae-Sung Rieh, “Terahertz Signal Source and Receiver Operating Near 600 GHz and Their 3-D Imaging Application,” IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 5, 2021. [Link]
Kiryong Song, Jungsoo Kim, Heekang Son, Junghwan Yoo, Minje Cho, Jae-Sung Rieh, “300-GHz InP HBT Quadrature VCO with Integrated Mixer,” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 4, 2020.[Link]
Kiryong Song, Jungsoo Kim, Doyoon Kim, Junghwan Yoo, and Jae-Sung Rieh, “A 300-GHz CMOS 7-by-7 detector array for optics-less THz imaging with scan-less target object,” J Infrared Milli Terahz Waves, vol. 41, no. 2, 2020.
Sooyeon Kim, Daekeun Yoon, and Jae-Sung Rieh, “A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network,” IEEE Transactions on Terahertz Science and Technology, vol. 9, no. 5, 2019. [Link]
Jungsoo Kim, Sooyeon Kim, Kiryong Song, and Jae-Sung Rieh, “A 300-GHz SPST Switch With a New Coupled-Line Topology in 65-nm CMOS Technology,” IEEE Transactions on Terahertz Science and Technology, vol. 9, no. 2, 2019. [Link]
Sungmook Lim, Hyunji Koo, Choul-Young Kim, Jungsoo Kim, Jae-Sung Rieh, and Songcheol Hong, “290-GHz 17-dB ON-/OFF-Ratio Modulator With Resonance Control Varactors” IEEE Microwave and Wireless Components Letters, vol. 29, no. 1, 2019. [Link]
Junghwan Yoo, Doyoon Kim, Jungsoo Kim, Kiryong Song, and Jae-Sung Rieh, “A 283-GHz Fully Integrated Phase-Locked Loop Based on 65-nm CMOS,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 6, 2018. [Link]
Jungsoo Kim, Daekeun Yoon, Jongwon Yun, Kiryong Song, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “Three-Dimensional Terahertz Tomography with Transistor-Based Signal-Source and Detector Circuits Operating Near 300 GHz,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 5, 2018. [Link]
Doyoon Kim, Sooyeon Kim, Kiryong Song, Jungsoo Kim, Junghwan Yoo, and Jae-Sung Rieh, “Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods,” Journal of Semiconductor Technology and Science, vol. 18, no. 4, May. 2018.[Link]
Doyoon Kim and Jae-Sung Rieh, “Compatision of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators,” Journal of Eloctromagnetic Engineering and Science, vol. 18, no. 2, Apr. 2018. [Link]
Jongwon Yun, Jungsoo Kim, Daekeun Yoon, and Jae-Sung Rieh, “A 645-GHz InP heterojunction bipolar transistor harmonic oscillator,” Electronics Letters, vol. 53, No. 22, pp. 1475-1477, 2017. [Link]
Daekeun Yoon, Jungsoo Kim, Jongwon Yun, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology,” IEEE Transactions on Terahertz Science and Technology, vol. 7, No. 5, pp. 536-545, 2017. [Link]
Dong-Hyun Kim, Doyoon Kim, and Jae-Sung Rieh, “A D-Band CMOS Amplifier With a New Dual-Frequency Interstage Matching Technique,” IEEE Transactions on Microwave Theory and Techniques, vol. 65, No. 5, pp. 1580-1588, 2017. [Link]
Jongwon Yun, Seung Jae Oh, Kiryong Song, Daekeun Yoon, and Jae-Sung Rieh, “Terahertz Reflection-Mode Biological Imaging Based on InP HBT Source and Detector,” IEEE Transactions on Terahertz Science and Technology, vol. 7, No. 3, pp. 274-283, 2017. [Link]
Jongwon Yun, Jungsoo Kim, and Jae-Sung Rieh, “A 280-GHz 10-dBm Signal Source based on InP HBT Technology,” IEEE Microwave and Wireless Component Letters, vol. 27, No. 2, pp. 159-161, 2017. [Link]
Daekeun Yoon, Myeong-Gyo Seo, Kiryong Song, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “A 260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology,” Electronics Letters, vol. 53, No. 3, pp. 194-196, 2017. [Link]
Namhyung Kim, Kiryong Song, Jongwon Yun, Junghwan Yoo, and Jae-Sung Rieh, “Two 122-GHz Phase-Locked Loops in 65-nm CMOS Technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 64, No. 8, pp. 2623-2630, Aug. 2016. [Link]
Joon Goo Lee, Seon Wook Kim, Dong-Hyun Kim, Younga Cho, Jae-Sung Rieh, Gyusung Kang, Jongsun Park, Hokyu Lee, Sejin Park, and Chulwoo Kim, “D2ART: Direct Data Accessing from Passive RFID Tag for infra-less, contact-less, and battery-less pervasive computing,” Microprocessors and Microsystems, vol. 39, pp. 767-781, 2015. [Link]
Daekeun Yoon, Jongwon Yun, and Jae-Sung Rieh, “A 310 – 340 GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology,” IEEE Transactions on Terahertz Science and Technology, vol. 5, No. 4, pp. 652-654, 2015. [Link]
Iljin Lee, Sangwoo Yoon, Jae-Sung Rieh, and Sanggeun Jeon, “Compact mm-wave CMOS Distributed Amplifier Using Series-Peaking Line and M-derived Section,” Microwave and Optical Technology Letters, vol. 57, No. 4, pp. 814-817, April 2015. [Link]
Jongwon Yun, Hyunchul Kim, Kiryong Song, and Jae-Sung Rieh, “D-band Stacked Amplifiers based on SiGe BiCMOS Technology,” Journal of Semiconductor Technology and Science, vol. 15, No. 2, pp. 276-279, April 2015. [Link]
Daekeun Yoon, Kiryong Song, Jungsoo Kim, Mehmet Kaynak, Bernd Tillack and Jae-Sung Rieh, “A D-band Active Imager in a SiGe HBT Technology,” Journal of Infrared Millimeter and Terahertz Waves, vol. 36, No. 4, pp. 335-349, 2015. [Link]
Daekeun Yoon, Namhyung Kim, Kiryong Song, Jungsoo Kim, Seung Jae Oh, and Jae-Sung Rieh, “D-Band Heterodyne Integrated Imager in a 65-nm CMOS Technology,” IEEE Microwave and Wireless Component Letters, vol. 25, No. 3, pp. 196-198, March 2015. [Link]
Jongwon Yun, Daekeun Yoon, Seungyoon Jung, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “Two 320 GHz Signal Sources based on SiGe HBT Technology,” IEEE Microwave and Wireless Component Letters, vol. 25, No. 3, pp. 178-180, March 2015.[Link]
Daekeun Yoon, Kiryong Song, Mehmet Kaynak, Bernd Tillack, and Jae-Sung Rieh, “An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology,” Journal of Semiconductor Technology and Science, vol. 15, no. 1, pp. 29-34, Feb. 2015. [Link]
Sooyeon Kim, Jongwon Yun, Daekeun Yoon, Moonil Kim, Jae-Sung Rieh, Miguel Urteaga, Member, and Sanggeun Jeon, “300-GHz Integrated Heterodyne Receiver and Transmitter with On-Chip Fundamental Local Oscillator and Mixers,” IEEE Transactions on Terahertz Science and Technology, vol. 5, No. 1, pp. 91-101, Jan. 2015.[Link]
Jongwon Yun, Daekeun Yoon, Hyunchul Kim, and Jae-Sung Rieh, “300 GHz InP HBT Oscillators based on Common-Base Cross-Coupled Topology,” IEEE Transactions on Microwave Theory and Techniques, vol. 62, No. 12, pp. 3053-3064, Dec. 2014.[Link]
Jongwon Yun, Namhyung Kim, Daekeun Yoon, Hyunchul Kim, Sanggeun Jeon, and Jae-Sung Rieh, “A 248 – 262 GHz InP HBT VCO with Interesting Tuning Behavior,” IEEE Microwave and Wireless Component Letters, vol. 24, No. 8, pp. 560-562, Aug. 2014. [Link]
Daekeun Yoon and Jae-Sung Rieh, “A 200-GHz Heterodyne Image Receiver with an Integrated VCO in a SiGe BiCMOS Technology,” IEEE Microwave and Wireless Component Letters, vol. 24, No. 8, pp. 557-559, Aug. 2014. [Link]
Namhyung Kim, Kyungmin Kim, and Jae-Sung Rieh, “A Triple-Push Voltage Controlled Oscillator in 0.13-um RFCMOS Technology Operating near 177 GHz,” IEICE Transactions on Electronics, vol. E97-C, No. 5, pp. 444-447, 2014.
J. Shin, I. Song, S. Hwang and J.-S. Rieh, “Bulk acoustic wave resonators of suppressed energy loss using improved lateral structure,” IEICE Electronics Express (ELEX), vol. 11, No. 6, pp. 1-7, 2014. [Link]
Jea-Shik Shin, Insang Song, Chul-Soo Kim, Moon-Chul Lee, Sang Uk Son, Duck-Hwan Kim, Ho-Soo Park, Sungwoo Hwang, and Jae-Sung Rieh, “Balanced RF Duplexer with Low Interference using Hybrid BAW Resonators for LTE Application,” ETRI Journal, vol. 36, No. 2, pp. 317-320, April 2014. [Link]
Namhyung Kim, Jongwon Yun, and Jae-Sung Rieh, “A 120 GHz Voltage Controlled Oscillator Integrated with 1/128 Frequency Divider Chain in 65 nm CMOS Technology,” Journal of Semiconductor Technology and Science, vol. 14, No. 1, pp. 131-137, Feb. 2014. [Link]
J. -S. Shin, I. Song, Y. Ai, S. Hwang and J. -S. Rieh, “Characterization and analysis of harmonic emissions in nonlinear bulk acoustic wave resonators,” Electronics Letters, vol. 49, No. 21, pp. 1311-1312, Oct. 2013. [Link]
Hyunchul Kim, Jongwon Yun, Kiryong Song, and Jae-Sung Rieh, “A SiGe 135-GHz Amplifier with Inductive Positive Feedback Operating near fmax,” Electronics Letters, vol. 49, No. 19, pp. 1229-1230, Sept. 2013. [Link]
Jea-Shik Shin, Insang Song, Chul-Soo Kim, Sang Uk Son, Moon-Chul Lee, Duck-Hwan Kim, Ho-Soo Park, Jing Cui, Yujie Ai, Sungwoo Hwang, and Jae-Sung Rieh, “Hybrid Bulk Acoustic Wave Structure for Temperature Stability of LTE Applications,” IEEE Microwave and Wireless Component Letters, vol. 23, no. 9, pp. 453-455, Sept. 2013. [Link]
Yongho Oh and Jae-Sung Rieh, “Effect of Device Layout on the Stability of RF MOSFETs,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 5, pp. 1861-1869, May, 2013. [Link]
Sung-Min Hong, Yongho Oh, Namhyung Kim, and Jae-Sung Rieh, “Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulation,” Solid-State Electronics, vol. 79, pp. 152-158, Jan. 2013. [Link]
J. Hacker, M. Urteaga, R. Lin, A. Skalare, I. Mehdi, J.-S. Rieh, and M. Kim, “400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks,” IEEE Microwave and Wireless Component Letters, vol. 22, no. 10, pp. 536-538, Oct. 2012. [Link]
Dong-Hyun Kim and Jae-Sung Rieh, “A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology,” IEEE Microwave and Wireless Component Letters, vol. 22, no. 8, pp. 409-411, Aug. 2012. [Link]
Hyogi Seo, Jongwon Yun, and Jae-Sung Rieh, “SiGe 140GHz ring-oscillator-based injection-locked frequency divider,” Electronics Letters, vol. 48, No. 14, pp. 847-848, July, 2012. [Link]
Dong-Hyun Kim and Jae-Sung Rieh, “CMOS 138-GHz Low Power Active Mixer with Branch-line Coupler,” Electronics Letters, vol. 48, no. 10, pp. 554-555, May, 2012. [Link]
Yongho Oh and Jae-Sung Rieh, “The Effect of Device Layout Schemes on RF Performance of Multi-finger MOSFETs,” IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp.785-791, May, 2012.
Hyogi Seo, Seungwoo Seo, Jongwon Yun, and Jae-Sung Rieh, “A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with a Inductive Feedback,” Journal of Semiconductor Technology and Science, vol. 11, no. 3, pp.190-197, September, 2011. [Link]
B. H. Hong, N. Cho, S. J. Lee, Y. S. Yu, L. Choi, Y. C. Jung, K. H. Cho, K. H. Yeo, D.-W. Kim, G. Y. Jin, K. S. Oh, D. Park, S.-H. Song, J.-S. Rieh, and S. W. Hwang, “Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge,” IEEE Electron Device Letters, vol. 32, no. 9, pp. 1179-1181, September, 2011. [Link]
Sungjin Kim, Hyun-Chul Kim, Dong-Hyun Kim, Sanggeun Jeon, Moonil Kim, and Jae-Sung Rieh, “A 58-72 GHz CMOS Wideband Variable Gain Low Noise Amplifier,” Electronics Letters, vol. 47, no. 16, pp. 904-906, August, 2011. [Link]
Yongho Oh, Namhyung Kim, and Jae-Sung Rieh, “A Comprehensive Study of High-Q Island-Gate Varactors (IGVs) for CMOS Millimeter-Wave Applications,” IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 6, pp. 1520-1528, June, 2011. [Link]
Hyogi Seo, Seungwoo Seo, Sanggeun Jeon, and Jae-Sung Rieh, “A Q-band Injection-Locked Frequency Divider with Inductive Feedback for a Locking Range Enhancement,” IEEE Microwave and Wireless Component Letters, Vol. 21, No. 6, pp. 317-319, June, 2011. [Link]
Sung-Jin Kim, Hyunchul Kim, Dong-Hyun Kim, Sanggeun Jeon, Yeocho Yoon, and Jae-Sung Rieh, “A V-band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills,” IEICE Transactions on Electronics, Vol. E94-C, No. 5, pp. 807-813, May, 2011.
J.B. Hacker, Y.M. Lee, H.J. Park, J.-S. Rieh, and M. Kim, “A 325 GHz InP HBT Differential-Mode Amplifier,” IEEE Microwave and Wireless Component Letters, Vol. 21, No. 5, pp. 264-266, May, 2011. [Link]
Dong-Hyun Kim, Sung-Jin Kim, and Jae-Sung Rieh, “A 60-GHz Wideband Quadrature-Balanced Mixer Based on 0.13-μm RFCMOS Technology,” IEEE Microwave and Wireless Component Letters, Vol. 21, No. 4, pp. 215-217, April, 2011. [Link]
Seo, Hyogi Seo, Sanggeun Jeon, and Jae-Sung Rieh, “A 20-30 GHz Divide-by-3 Ring-Oscillator-Based Injection Locked Frequency Divider with a Wide Locking Range,” Microwave and Optical Technology Letters, Vol. 53, No. 4, pp.839 – 841, April, 2011. [Link]
Yongho Oh, Seungyong Lee, Hyungcheol Shin, and Jae-Sung Rieh, “Trench-Type Deep N-Well Dual Guard Ring for the Suppression of Substrate Noise Coupling,” International Journal of RF and Microwave Computer-Aided Engineering, Vol. 21, No. 1, pp.36 – 44, Jan. 2011. [Link]
Chanhyeong Park, Yongho Oh, and Jae-Sung Rieh, “Noise Figure Formulas of RF MOSFETs in the Presence of Digital Substrate Noise,” IEEE Microwave and Wireless Component Letters, Vol. 20, No. 11, pp.622-624, Nov. 2010. [Link]
Yongho Oh, Sanggeun Jeon, and Jae-Sung Rieh, “Variation in RF Performance of MOSFETs due to Substrate Digital Noise Coupling,” IEEE Microwave and Wireless Component Letters, Vol. 20, No. 7, pp.384-386, July 2010. [Link]
M. G. Kang, J. H. Ahn, J. Lee, D. H. Hwang, H. T. Kim, J. –S. Rieh, D. Whang, M. H. Son, D. Ahn, Y. S. Yu, S. W. Hwang, “Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire,” Japanese Journal of Applied Physics, Vol. 49, No. 6, pp. 06GG12, June, 2010. [Link]
Seungwoo Seo and Jae-Sung Rieh, “A Low Power V-band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology,” IEICE Transactions on Electronics, Vol. E93,C, No. 5, pp.614-618, May 2010.
Namhyung Kim, Yongho Oh, and Jae-Sung Rieh, “A 47 GHz LC Cross-Coupled VCO Employing High-Q Island-Gate Varactor for Phase Noise Reduction,” IEEE Microwave and Wireless Component Letters, Vol. 20, No. 2, pp.94-96, Feb. 2010. [Link]
B. H. Hong, Y. C. Jung, J. S. Rieh, S. W. Hwang, K. H. Cho, K. H. Yeo, S. D. Suk, Y. Y. Yeoh, M. Li, D.-W. Kim, D. Park, K. S. Oh, W.-S. Lee, “Possibility of Transport through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET,” IEEE Transactions on Nanotechnology, Vol. 8, No. 6, pp.713 -717, Nov. 2009. [Link]
Yongho Oh, Seungyong Lee, Chanhyeong Park, and Jae-Sung Rieh, “Impact of Substrate Digital Noise Coupling on the High-Frequency Noise Performance of RF MOSFETs,” IEEE Microwave and Wireless Component Letters, Vol. 19, No. 9, pp.557-559, Sept. 2009. [Link]
L. Choi, B. H. Hong, Y. C. Jung, K. H. Cho, K. H. Yeo, S. D. Suk, Y. Y. Yeoh, M. Li, D.-W. Kim, G. Y. Jin, D. Park, K. S. Oh, W.-S. Lee, J. S. Rieh, D.M. Hwang, and S.W. Hwang, “Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field effect transistors,” IEEE Electron Device Letters, Vol. 30, No. 6, pp.665 -667, June 2009. [Link]
Jiahui Yuan, John D. Cressler, Ram Krithivasan, Tushar Thrivikraman, Marwan H. Khater, David C. Ahlgren, Alvin J. Joseph, and Jae-Sung Rieh “On the Performance Limits of Cryogenically-Operated SiGeHBTs and Its Relation to Scaling for TeraHertz Speeds,” IEEE Transactions on Electron Devices, Vol. 56, No. 5, pp.1007 – 1019, May 2009. [Link]
Yongho Oh, Sooyeon Kim, Seungyong Lee, and Jae-Sung Rieh, “The Island-Gate Varactor – A High-Q MOS Varactor for Millimeter-Wave Applications,” IEEE Microwave and Wireless Component Letters, Vol. 19, No. 4, pp.215-217, April 2009. [Link]
Shlomo Pinhas, SungWoo Hwang, and Jae-Sung Rieh, “A Magnetostatic Model for Square Spiral Inductors Incorporating a Magnetic Layer,” IEEE Transactions on Magnetics, Vol. 44, No. 8, pp.2085-2087, August 2008. [Link]
Jeongkyu Heo, JaeChoon Kim, KiHyuk Kim, Jae-Sung Rieh, JinTaek Chung, and
SungWoo Hwang, “Effect of Printed Circuit Board Structures on Temperature-dependent Gain Characteristics of RF Power Amplifier Chips,” IEEE Microwave and Wireless Component Letters, Vol. 18, No. 5, pp. 323-325, May 2008. [Link]
GyoungBum Kim, Seung-Yong Cha, Eun-Kyung Hyun, YoungChai Jung, YoonSuk Choi, Jae-Sung Rieh, Seong-Rae Lee, and SungWoo Hwang, “Integrated Planar Spiral Inductors with CoFe and NiFe Ferromagnetic Layer,” Microwave and Optical Technology Letters, Vol. 50, No. 3, pp. 676-678, March 2008. [Link]
Daeik Kim, Jonghae Kim, Jean-Olivier Plouchart, Choongyeun Cho, Robert Trzcinski, Sungjae Lee, Mahender Kumar, Christine Norris, Jae-Sung Rieh, Greg Freeman, and David Ahlgren, “Manufacturable parasitic-aware circuit-level FETs in 65nm SOI CMOS technology,” IEEE Electron Device Letters, Vol. 28, No. 6, pp. 520-522, June 2007. [Link]
Marwan H. Khater, Thomas N. Adam, Rajendran Krishnasamy, Mattias E. Dahlstrom, Jae-Sung Rieh, Kathryn T. Schonenberg, Bradly A. Orner, Francois Pagette, Kenneth Stein, and David C. Ahlgren, “Present status and future directions of SiGe HBT technology,” International Journal of High Speed Electronics and Systems, Vol. 17, No. 1, pp. 61-80, March 2007. [Link]
Marwan Khater, Thomas Adam, Jae-Sung Rieh, Kathryn Schonenberg, Francois Pagette, Kenneth Stein, Shwu-Jen Jeng, David Ahlgren, and Gregory Freeman, “Pushing the Performance Limits of SiGe HBT Technology,” ECS Transactions, Vol. 3, No. 7, pp. 341- 353, 2006.
Jae-Sung Rieh, Marwan Khater, Alvin Joseph, Greg Freeman, and David Ahlgren, “Effect of collector lateral scaling on the performance of high-speed SiGe HBTs with fT > 300 GHz,” Electronics Letters, Vol. 42, No. 20, pp. 1180-1181, Sept. 28, 2006. [Link]
Jae-Sung Rieh, Marwan Khater, Greg Freeman, and David Ahlgren, “SiGe HBT without selectively implanted collector (SIC) exhibiting fmax = 310 GHz and BVCEO = 2 V,” IEEE Transactions on Electron Devices, Vol. 53, No. 9, pp. 2407-2409, Sept. 2006. [Link]
R. Krithivasan, Y. Lu, J. Cressler, J. –S. Rieh, M, Khater, D. Ahlgren, and G. Freeman, “Half-terahertz operation of SiGe HBTs,” IEEE Electron Device Letters, Vol. 27, No. 7, pp. 567-569, July 2006. [Link]
Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J.D. Cressler, G. Niu, J.-S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “Analysis and understanding of unique cryogenic phenomena of state-of-the-art SiGe HBTs,” Solid-State Electronics, Vol. 50, No. 6, pp. 964-972, June 2006. [Link]
Jae-Sung Rieh, David Greenberg, Qizhi Liu, Alvin Joseph, Greg Freeman, and David Ahlgren, “Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances,” IEEE Transactions on Electron Devices, Vol. 52, No. 12, pp. 2744-2752, Dec. 2005. [Link]
JuHwan Lim, DaeHan Kwon, Jae-Sung Rieh, Soo-Won Kim, SungWoo Hwang, “RF characterization and modeling of various wire bond transitions,” IEEE Transactions on Advanced Packaging, Vol. 28, No. 4, pp. 772-778, Nov. 2005. [Link]
Jae-Sung Rieh, David Greenberg, Andreas Stricker, and Greg Freeman, “Scaling of SiGe heterojunction bipolar transistors (invited),” Proceedings of the IEEE, Vol. 93, No. 9, pp. 1522-1538, Sept. 2005. [Link]
Jae-Sung Rieh, Jin Cai, Tak H. Ning, Andreas Stricker, and Greg Freeman, “Reverse active mode current characteristics of SiGe HBTs,” IEEE Transactions on Electron Devices, DPF Vol. 52, No. 6, pp. 1219-1222, June 2005. [Link]
Andreas Stricker, Greg Freeman, Marwan Khater, and Jae-Sung Rieh, “Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT,” Materials Science in Semiconductor Processing, Vol. 8, pp. 295-299, Feb. 2005. [Link]
A. K. Sutton, J. Cressler, B. M. Haugerud, Y. Lu, W. –M. Kuo, P. W. Marshall, R. A. Reed, J. –S. Rieh, G. Freeman, and D. Ahlgren, “Proton response of fourth-generation 350 GHz UHV/CVD SiGe HBTs,” IEEE Transactions on Nuclear Science, Vol. 51, No. 6, pp. 3736-3742, Dec. 2004. [Link]
Jarle. A. Johansen, Zhenrong Jin, John D. Cressler, Yan Cui, Guofu Niu, Qingqing Liang, Jae-Sung Rieh, Greg Freeman, Dave Ahlgren, and Alvin Joseph, “On the scaling limits of low-frequency noise in SiGe HBTs,” Solid-State Electronics, Vol. 48, No. 10-11, pp. 1897-1900, October-November, 2004. [Link]
Jae-Sung Rieh, Basanth Jagannathan, David Greenberg, Mounir Meghelli, Alexander Rylyakov, Fernando Guarin, Zhijian Yang, David Ahlgren, Greg Freeman, Peter Cottrell, and David Harame, “SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications,” IEEE Transactions on Microwave Theory and Techniques, Vol. 52, No. 10, pp. 2390-2408, Oct. 2004. [Link]
Greg Freeman, Jae-Sung Rieh, Zhijian Yang, Fernando Guarin (invited), “Reliability and performance scaling of very high speed SiGe HBTs,” Microelectronics Reliability, Vol. 44, No. 3, pp. 397-410, March 2004. [Link]
Andreas Stricker, Jeffrey Johnson, Greg Freeman, and Jae-Sung Rieh, “Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD,” Applied Surface Science, Vol. 224, pp. 324-329, 15 March 2004. [Link]
D. L. Harame, S. J. Koester, G. Freeman, P. Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, J. S. Dunn, D. Greenberg, A. Joseph, F. Anderson, J. –S. Rieh, St. S. Onge, D. Coolbaugh, V. Ramachandran, J. D. Cressler, S. Subbanna, “The revolution in SiGe: impact on device electronics,” Applied Surface Science, Vol. 224, pp. 9-17, 15 March 2004. [Link]
Jae-Sung Rieh, Basanth Jagannathan, David Greenberg, Greg Freeman, and Seshadri Sub¬banna, “A doping concentration-dependent upper limit of the breakdown voltage – cutoff frequency product in Si bipolar transistors,” Solid-State Electronics, Vol. 48, No. 2, pp. 339-343, Feb. 2004. [Link]
A. Joseph, J. Dunn, G. Freeman, D. Harame, D. Coolbaugh, R. Groves, K. Stein, R. Volant, S. Subbanna, V. S. Marangos, S. St. Onge, E. Eshun, P. Cooper, J. Johnson, J. –S. Rieh, B. Jagannathan, V. Ramachandran, D. Ahlgren, D. Wang, X. Wang, “Product applications and technology directions with SiGe BiCMOS,” IEEE Journal of Solid-State Circuits, Vol. 38, No. 9, pp. 1471-1478, Sept. 2003. [Link]
J. –S. Rieh, K. Watson, F. Guarin, Z. Yang, P. -C. Wang, A. Joseph, G. Freeman, and S. Subbanna, “Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density,” IEEE Transactions on Device and Materials Reliability, Vol. 3, No. 2, pp. 31-38, June 2003. [Link]
Basanth Jagannathan, Mounir Meghelli, Kevin Chan, Jae-Sung Rieh, Kathryn Schonenberg, David Ahlgren, Seshadri Subbanna, and Greg Freeman, “3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay,” IEEE Electron Device Letters, Vol. 24, No. 5, pp. 324-326, May 2003. [Link]
Greg Freeman, Basanth Jagannathan, Shwu-Jen Jeng, Jae-Sung Rieh, Andreas Stricker, David Ahlgren, and Seshadri Subbanna, “Transistor design and application considerations for >200GHz SiGe HBTs (invited),” IEEE Transactions on Electron Devices, Vol. 50, No. 3, pp. 645-655, March 2003. [Link]
J. S. Dunn, D. C. Ahlgren, D. D. Coolbaugh, N. B. Feilchenfeld, G. Freeman, D. R. Greenberg, R. A. Groves, F. J. Guarin, Y. Hammad, A. J.Joseph, L. D. Lanzerotti, S. A. St. Onge, B. A. Orner, J. –S. Rieh, K. J. Stein, S. H. Voldman, P. –C. Wang, M. J. Zierak, S. Subbanna, D. L. Harame, D. A. Herman Jr. and B. S. Meyerson, “Foundation of rf CMOS and SiGe BiCMOS technologies,” IBM Journal of Research and Development, Vol. 77, No. 2/3, pp. 101-138, March 2003. [Link]
Greg Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander Rylyakov, Michael A. Sorna, Todd Tanji, Oswin M. Schreiver, Kieth Walter, Jae-Sung Rieh, Basanth Jagannathan, Alvin Joseph, and Seshadri Subbanna, “40 Gbit/sec circuits built from a 120GHz fT SiGe technology (invited),” IEEE Journal of Solid-State Circuits, Vol. 37, No. 9, pp. 1106-1114, Sept. 2002. [Link]
B. Jagannathan, M. Khater, F. Pagette, J. –S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D. R. Greenberg, R. Groves, S. J. Jeng, J. Johnson, E. Mengistu, K. T. Schonenberg, C. M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, “Self-aligned SiGe NPN transistors with 285GHz fMAX and 207GHz fT in a manufacturable technology,” IEEE Electron Device Letters, Vol. 23, No. 5, pp. 258-260, May 2002. [Link]
S. Subbanna, G. Freeman, J.-S. Rieh, D. Ahlgren, K. Stein, C. Dickey, J. Mecke, P. Bacon, R. Groves, M. Meghelli, M. Soyuer, B. Jagannathan, K. Schonenberg, S. Jeng, R. Volant, D. Greenberg, H. Chen, D. Harame, J. Dunn, L. Larson, D. Herman and B. Meyerson, “50-200GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+ GHz very large-scale integration mixed-signal ICs,” Japanese Journal of Applied Physics, Vol. 41, Part 1, No. 2B, pp. 1111-1123, Feb. 28, 2002. [Link]
S. J. Jeng, B. Jagannathan, J. -S. Rieh, J. Johnson, K. T. Schonenberg, D. Greenberg, A. Stricker, H. Chen, M. Khater, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, “A 210 GHz fT SiGe HBT with a non-self-aligned structure,” IEEE Electron Device Letters, Vol. 22, No. 11, pp. 542-544, Nov. 2001. [Link]
Zhenqiang Ma, Pallab Bhattacharya, Jae-Sung Rieh, George Ponchak, Samuel Alterovitz, and Edward. T. Croke, “Reliability of microwave SiGe/Si heterojunction bipolar transistors,” IEEE Microwave and Wireless Components Letters, Vol. 11, No. 10, pp. 401-403, Oct. 2001. [Link]
J. -S. Rieh, P. K. Bhattacharya, and E. T. Croke, “Temperature dependent minority electron mobilities in strained Si1-xGex (0.2<x<0.4) layer,” IEEE Transactions on Electron Devices, Vol. 47, No. 4, pp. 883-890, April 2000. [Link]
J. -S. Rieh, L. -H. Lu, L. P. B. Katehi, P. K. Bhattacharya, E. T. Croke, G. E. Ponchak, and S. A. Alterovitz, “X- and Ku-band amplifiers based on Si/SiGe HBTs and micromachined components,” IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 5, pp. 685-694, May 1998. [Link]
J. -S. Rieh, D. Klotzkin, O. Qasaimeh, L. -H. Lu, K. Yang, L. P. B. Katehi, P. Bhattacharya, and E. T. Croke, “Monolithically integrated SiGe/Si PIN-HBT front-end photoreceivers,” IEEE Photonics Technology Letters, Vol. 10, No. 3, pp. 415-417, March 1998. [Link]
J. -S. Rieh, O. Qasaimeh, L. -H. Lu, K. Yang, L. P. B. Katehi, P. Bhattacharya, and E. T. Croke, “Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology,” IEEE Microwave and Guided Wave Letters, Vol. 8, No. 2, pp. 63-65, Feb. 1998. [Link]
K. K. Linder, F. C. Zhang, J. -S. Rieh, and P. Bhattacharya, “Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy,” Journal of Crystal Growth, Vol. 175/176, pp. 499-503, 1997. [Link]
K. K. Linder, F. C. Zhang, J. -S. Rieh, P. Bhattacharya, and D. Houghton, “Reduction of defect density in mismatched SiGe/Si by low temperature Si buffer layers,” Applied Physics Letters, Vol. 70, No. 24, pp. 3224-3226, 16 June 1997.
R. Malik, E. Gulari, P. Bhattacharya, K. Linder, and J. -S. Rieh, “Very high (>1019cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine,” Applied Physics Letters, Vol. 70, No. 9, pp. 1149-1151, 3 March 1997. [Link]
