본 연구실에서 최근 석사과정을 수행한 김현철 군이 윤종원 및 송기룡 석박통합과정과 함께 공저하여 Electronics Letters 에 제출한 논문이 채택 되었습니다. 축하합니다.
Hyunchul Kim, Jongwon Yoon, Kiryong Song, and Jae-Sung Rieh, “A SiGe 135-GHz Amplifier with Inductive Positive Feedback Operating near fmax”
Abstract: This paper presents a common base 5-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology. Inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with power consumption of 67.2 mW. Measured output saturated power was -5.8 dBm. The total chip area including pads is 1.54 x 0.56 mm2
