김성진 석사졸업 논문 게재 (IET EL)

연구실 졸업생인 김성진군 (석사졸업) 의 논문이 IET Electronics Letters 에 게재되었습니다. 논문의 정보는 다음과 같습니다.

Title : 58-72 GHz CMOS wideband variable gain low-noise amplifier

Authors : S. Kim, H.-C. Kim, D.-H. Kim, S. Jeon, M. Kim and J.-S. Rieh

Journal : IET Electronics Letters, vol. 47, no. 16, pp. 904-906, August, 2011. [SCI]

Abstract

A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58–72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60–70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P21dB was measured to be 222.1 dBm. DCpower consumption is 36 mW with VDD = 1.2 V and the chip size is0.75 × 0.65 mm.