Title : A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology

Author : Dong-Hyun Kim, Jae-Sung Rieh

Journal : IEEE Microwave and Wireless Components Letters, Vol. 22, No. 8, pp. 409-411, Aug. 2012 [SCI]

Abstract:

A 135 GHz gm-boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-um SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P1dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies of chip area excluding pad region.