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Namhyung Kim, Kyoungmin Kim, and Jae-Sung Rieh,  “A Triple-Push Voltage Controlled Oscillator in 0.13-um RFCMOS Technology Operating near 177 GHz Date of Evaluation”

Abstract: This paper presents a G-band triple-push voltage controlled oscillator (VCO) operating around 177 GHz. The VCO, implemented in a commercial 0.13-m RFCMOS technology, adopts a triple-push topology that is composed of 3 symmetrically coupled identical Colpitts sub-oscillators. Oscillation frequency can be tuned from 175.9 GHz to 178.4 GHz with varactor tuning voltage swept from 0 to 1.2 V. The calibrated output power ranged from -19.7 dBm to -16.6 dBm depending on the oscillation frequency. The measured phase noise of the VCO is -80.2 dBc/Hz at 1 MHz offset. The results clearly demonstrate the possibility of applying triple-push topology for VCOs operating beyond 100 GHz, enabling various high frequency applications that require tunable frequency sources.